3.1 - 85 3.1 power mosfet in hermetic isolated to-254aa package features ? isolated hermetic metal package ? fast switching ? low r ds(on) ? available screened to mil-s-19500, tx, txv and s levels ? same as irfm 150 - 450 series ? ceramic feedthroughs available description this series of hermetically packaged products feature the latest advanced mosfet and packaging technology. they are ideally suited for military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. maximum ratings @ 25 c OM6019SA om6020sa om6017sa om6018sa 100v thru 500v, up to 25 amp, n-channel mosfet in hermetic metal package 4 11 r4 supersedes 1 07 r3 part number v ds r ds(on) i d om6017sa 100 v .065 25 a om6018sa 200 v .100 25 a OM6019SA 400 v .33 13 a om6020sa 500 v .42 11 a schematic power rating
3.1 - 86 om6017sa - om6020sa 3.1 electrical characteristics: ( t c = 25c unless otherwise noted) electrical characteristics: ( t c = 25c unless otherwise noted) static p/n om6017sa static p/n om6018sa parameter min. typ. max. units test conditions parameter min. typ. max. units test conditions bv dss drain-source breakdown 100 v v gs = 0, bv dss drain-source breakdown 200 v v gs = 0, voltage i d = 250 m a voltage i d = 250 m a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m av gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m a i gssf gate-body leakage forward 100 na v gs = +20 v i gssf gate-body leakage forward 100 na v gs = + 20 v i gssr gate-body leakage reverse - 100 na v gs = -20 v i gssr gate-body leakage reverse -100 na v gs = - 20 v i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, t c = 125 c t c = 125 c i d(on) on-state drain current 1 35 a v ds 2 v ds(on) , v gs = 10 v i d(on) on-state drain current 1 30 a v ds 2 v ds(on) , v gs = 10 v v ds(on) static drain-source on-state 1.1 1.3 v v gs = 10 v, i d = 20 a v ds(on) static drain-source on-state 1.36 1.60 v v gs = 10 v, i d = 16 a voltage 1 voltage 1 r ds(on) static drain-source on-state 0.55 0.65 v gs = 10 v, i d = 20 a r ds(on) static drain-source on-state .085 .100 v gs = 10 v, i d = 16 a resistance 1 resistance 1 r ds(on) static drain-source on-state .09 0.11 v gs = 10 v, i d = 20 a, r ds(on) static drain-source on-state 0.14 0.17 v gs = 10 v, i d = 16 a, resistance 1 t c = 125 c resistance 1 t c = 125 c dynamic dynamic g fs forward transductance 1 9.0 s ( w ) v ds 2 v ds(on) , i d = 20 a g fs forward transductance 1 10.0 s ( w ) v ds 2 v ds(on) , i d = 16 a c iss input capacitance 2700 pf v gs = 0 c iss input capacitance 2400 pf v gs = 0 c oss output capacitance 1300 pf v ds = 25 v c oss output capacitance 600 pf v ds = 25 v c rss reverse transfer capacitance 470 pf f = 1 mhz c rss reverse transfer capacitance 250 pf f = 1 mhz t d(on) turn-on delay time 28 ns v dd = 30 v, i d @ 20 a t d(on) turn-on delay time 25 ns v dd = 75 v, i d @ 16 a t r rise time 45 ns r g = 5.0 w , v g = 10v t r rise time 60 ns r g = 5.0 w ,v gs = 10v t d(off) turn-off delay time 100 ns t d(off) turn-off delay time 85 ns t f fall time 50 ns t f fall time 38 ns body-drain diode ratings and characteristics body-drain diode ratings and characteristics i s continuous source current - 40 a modified mospower i s continuous source current - 30 a modified mospower (body diode) symbol showing (body diode) symbol showing i sm source current 1 - 160 a the integral p-n i sm source current 1 - 120 a the integral p-n (body diode) junction rectifier. (body diode) junction rectifier. v sd diode forward voltage 1 - 2.5 v t c = 25 c, i s = -40 a, v gs = 0 v sd diode forward voltage 1 - 2 v t c = 25 c, i s = -30 a, v gs = 0 t rr reverse recovery time 400 ns t j = 150 c, i f = i s , t rr reverse recovery time 350 ns t j = 150 c, i f = i s , dl f /ds = 100 a/ m s dl f /ds = 100 a/ m s 1 pulse test: pulse width 300 m sec, duty cycle 2%. 1 pulse test: pulse width 300 m sec, duty cycle 2%. (mosfet switching times are essentially independent of operating temperature.) (mosfet switching times are essentially independent of operating temperature.) g d s g d s ( w ) ( w )
electrical characteristics: ( t c = 25c unless otherwise noted) electrical characteristics: ( t c = 25c unless otherwise noted) static p/n OM6019SA static p/n om6020sa parameter min. typ. max. units test conditions parameter min. typ. max. units test conditions bv dss drain-source breakdown 400 v v gs = 0, bv dss drain-source breakdown 500 v v gs = 0, voltage i d = 250 m a voltage i d = 250 m a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m av gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m a i gssf gate-body leakage forward 100 na v gs = +20 v i gssf gate-body leakage forward 100 na v gs = +20 v i gssr gate-body leakage reverse - 100 na v gs = - 20 v i gssr gate-body leakage reverse - 100 na v gs = - 20 v i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, t c = 125 c t c = 125 c i d(on) on-state drain current 1 15 a v ds 2 v ds(on) , v gs = 10 v i d(on) on-state drain current 1 13 a v ds 2 v ds(on) , v gs = 10 v v ds(on) static drain-source on-state 2.0 2.64 v v gs = 10 v, i d = 8.0 a v ds(on) static drain-source on-state 2.1 2.94 v v gs = 10 v, i d = 7.0 a voltage 1 voltage 1 r ds(on) static drain-source on-state 0.25 .33 v gs = 10 v, i d = 8.0 a r ds(on) static drain-source on-state 0.3 0.42 v gs = 10 v, i d = 7.0 a resistance 1 resistance 1 r ds(on) static drain-source on-state 0.50 0.66 v gs = 10 v, i d = 8.0 a, r ds(on) static drain-source on-state 0.66 0.88 v gs = 10 v, i d = 7.0 a, resistance 1 t c = 125 c resistance 1 t c = 125 c dynamic dynamic g fs forward transductance 1 6.0 s ( w ) v ds 2 v ds(on) , i d = 8.0 a g fs forward transductance 1 6.0 s ( w ) v ds 2 v ds(on) , i d = 7.0 a c iss input capacitance 2900 pf v gs = 0 c iss input capacitance 2600 pf v gs = 0 c oss output capacitance 450 pf v ds = 25 v c oss output capacitance 280 pf v ds = 25 v c rss reverse transfer capacitance 150 pf f = 1 mhz c rss reverse transfer capacitance 40 pf f = 1 mhz t d(on) turn-on delay time 30 ns v dd = 200 v, i d @ 8.0 a t d(on) turn-on delay time 30 ns v dd = 210 v, i d @ 7.0 a t r rise time 40 ns r g =5.0 w , v gs =10v t r rise time 46 ns r g = 5.0 w , v gs = 10 v t d(off) turn-off delay time 80 ns t d(off) turn-off delay time 75 ns t f fall time 30 ns t f fall time 31 ns body-drain diode ratings and characteristics body-drain diode ratings and characteristics i s continuous source current - 15 a modified mospower i s continuous source current - 13 a modified mospower (body diode) symbol showing (body diode) symbol showing i sm source current 1 - 60 a the integral p-n i sm source current 1 - 52 a the integral p-n (body diode) junction rectifier. (body diode) junction rectifier. v sd diode forward voltage 1 - 1.6 v t c = 25 c, i s = -15 a, v gs = 0 v sd diode forward voltage 1 - 1.4 v t c = 25 c, i s = -13 a, v gs = 0 t rr reverse recovery time 600 ns t j = 100 c, i f = i s , t rr reverse recovery time 700 ns t j = 150 c, i f = i s , dl f /ds = 100 a/ m s dl f /ds = 100 a/ m s 1 pulse test: pulse width 300 m sec, duty cycle 2%. 1 pulse test: pulse width 300 m sec, duty cycle 2%. 3.1 - 87 om6017sa - om6020sa 3.1 (mosfet switching times are essentially independent of operating temperature.) (mosfet switching times are essentially independent of operating temperature.) g d s g d s ( w ) ( w )
om6017sa - om6020sa 3.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 absolute maximum ratings (t c = 25c unless otherwise noted) parameter om6017sa om6018sa OM6019SA om6020sa units v ds drain-source voltage 100 200 400 500 v v dgr drain-gate voltage (r gs = 1 m ) 100 200 400 500 v i d @ t c = 25c continuous drain current 2 25 25 13 11 a i d @ t c = 100c continuous drain current 2 16 16 8 7 a i dm pulsed drain current 1 100 80 54 40 a v gs gate-source voltage 20 20 20 20 v p d @ t c = 25c maximum power dissipation 125 125 125 125 w p d @ t c = 100c maximum power dissipation 50 50 50 50 w junction to case linear derating factor 1.0 1.0 1.0 1.0 w/c junction to ambient linear derating factor .020 .020 .020 .020 w/c t j operating and t stg storage temperature range -55 to 150 -55 to 150 -55 to 150 -55 to 150 c lead temperature (1/16" from case for 10 secs.) 300 300 300 300 c 1 pulse test: pulse width 300 sec. duty cycle 2%. 2 package pin limitation = 15 amps thermal resistance r thjc junction-to-case 1.0 c/w r thja junction-to-ambient 50 c/w free air operation .144 dia. .050 .040 .260 .249 .685 .665 .800 .790 .545 .535 .550 .510 .045 .035 .550 .530 .150 typ. .150 typ. .005 mechanical outline .040 dia. 3 plcs. .150 .260 max .040 .940 .500 min. .150 .125 2 plcs. .290 .125 dia. 2 pls. .200 .540 .250 .740 .540 .100 2 plcs. .300 12 3 12 3 pin 1: drain pin 2: source pin 3: gate notes: standard products are supplied with glass feedthroughs. for ceramic feedthroughs, add the letter c to the part number. example - omxxxxcsa mosfets are also available in z-tab, dual and quad pak styles - please call the factory for more informa tion. package options mod pak z-tab 6 pin sip
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